الفهرس 
Theoretical Background and Literature SurveyOnly 14 pages are availabe for public view
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Abstract
Summary
The physical characteristics of semiconductors have been the subject of extensive, in-depth research in recent years. The semiconductor chalcogenide material indium selenide (In2Se3) crystallizes as a double layer of Se-In-Se-In-Se atoms stacked along the c-axis through the Se atom. It is a member of the family A2 IIIB3 VI. Due to its special physical properties, two-dimensional (2D) material has also been the most widely used for creating different electrical and optoelectronic devices, including ferroelectric field-effect transistors, phase-change memory, gas detectors, solar cells, and light detectors.
Thermal evaporation was used to create In2Se3 thin films. Structural characterizations are accomplished using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive X-ray diffraction (EDX), electron diffraction, and particle size analyzer (PSA). It was discovered that the In2Se3 combination in powder form had a hexagonal structure with the lattice constants a=b=4.025, c=19.235, V=269.8699, = β = 90°, =120°, and a space group (P63).
The size of the crystallite, calculated using the Scherrer equation, is 57.75 nm based on the examination of powder data and for the highest orientation (400). We used a particle size analyzer and the Williamson-Hall equation to confirm the crystallinity of the nanoscale structure.
Through spectrophotometric measurements of transmittance and reflectance at normal incidence of light in the wavelength range of 200–2500 nm, the optical characteristics of the as-deposited In2Se3 films are examined. The direct value was discovered to be 2.25 eV, which is greater than that reported in the literature and confirms the structural characteristics of nanocrystalline materials that deteriorated with radiation doses. The single oscillator model and the Cauchy relation are used to describe the dispersion of the refractive index, n. Estimates are made for the polarizability, dispersion parameters, and the ratio of free carrier concentration to effective mass.
The J-V characteristics of the Au/n- In2Se3/p-Si/Al heterojunction, which displays rectifying behavior in the dark and may be explained by the creation of the Schottky barrier at the Au electrode, and the typical junction parameters were calculated between 308 and 398 K. With an open-circuit voltage (Voc ) of 0.53 V and a fill factor (FF) of 31.7%, the Au/n-In2Se3/p-Si/Al heterojunction displayed photovoltaic properties. and efficiency of the power conversion of 1.2%.