Search In this Thesis
   Search In this Thesis  
العنوان
Modification of the Electrical Performance of Carbon Nanotube Transistors \
المؤلف
Salem, Nada El-saied Abdallah Hassan.
هيئة الاعداد
باحث / ندا السيد عبدالله حسن سالم
مشرف / محمد عبد الحميد ابو العطا
مشرف / محمود العصيمي
مشرف / أحمد شاكر غزالة
تاريخ النشر
2021.
عدد الصفحات
124 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
الهندسة الكهربائية والالكترونية
تاريخ الإجازة
1/1/2020
مكان الإجازة
جامعة عين شمس - كلية الهندسة - هندسة الالكترونيات والاتصالات
الفهرس
Only 14 pages are availabe for public view

from 124

from 124

Abstract

The Tunneling Carbon Nanotube filed-effect transistor (T-CNTFET) is one of the most promising alternatives to the conventional MOSFET. However, T-CNTFET suffers mainly from low ON-current. In this thesis, we will discuss two techniques. First, the major limitation of T-CNTFET is the ambipolar behavior, which could be solved by using a partially-gated channel or Gaussian doping method. The effect of using the two mentioned methods on the electrical characteristics of T-CNTFET has been examined. The non-equilibrium Green’s functions (NEGF) in conjunction with Poisson’s equation are solved self-consistently. The cutoff frequency (fT) and power-delay product (PDP) as well as the intrinsic delay (τ) have been considered as key parameters for frequency performance and speed characteristics. The simulation results show an improvement in the OFF-state current and the high-frequency performance as well as a suppression of the ambipolar conduction. These advantages of the proposed techniques make T-CNTFET suitable for low-power and high-speed applications. Second, we propose a modified hetero-dielectric T- CNTFET in which a dielectric pocket is inserted near the source-channel interface. The impact of the length of the dielectric pocket and its shift from source/channel barrier on DC and high-frequency performance is investigated. The performance parameters are studied by examining ON-current (ION) and cutoff frequency (fT) as measures for the DC and high frequency behavior, respectively. It is demonstrated that the condition of optimum value of ION is different from that fT and a compromise should be met in order to obtain the best performance. It is shown, based on our developed 2D quantum simulations that a high-k pocket having a length of 12.5% of the channel length may result in an increase of 65% in ION with no deterioration in fT. Moreover, a little shift of 20% of the pocket length towards the source region does not degrades ION and enhances fT.