Only 14 pages are availabe for public view
In this work, porous silicon (PS) layers are performed on the front side of n^+ p wafer via electrochemical etching technique, using isopropanol as solvent, and are covered with Al doped ZnO (AZO) films prepared by Sol-Gel spin-coating method. The structural, optical properties of PS, AZO and AZO/PS have been investigated. The results show that the energy band gap of PS layer is higher than that of nonporous Si and increases slightly with increasing the etching time. The X-ray diffraction shows that prepared AZO films have nanostructure character with hexagonal structure. The optical properties of AZO films are studied in terms of measuring the transmittance and reflectance over wavelength range 200-2500 nm. Using these parameters, the absorption coefficient and refractive index of AZO films are calculated and the related parameters are estimated. AZO films are deposited on PS/n^+ p and exhibit low reflectance compared to n^+ p and AZO/n^+ p systems. The improvement of the solar cells performance due to the effect of porosity and AZO films deposition are investigated in which the solar cells parameters are evaluated and discussed.
Keywords: Porous Si; AZO films; Antireflective layers; Solar cells.