الفهرس | Only 14 pages are availabe for public view |
Abstract Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the new era. The recently found memristor ”the missing fourth circuit element”, is a potential candidate for the next-generation memories and has received great attention in the last few years because of their unique properties especially in memory technologies. Owing to their analog nature, memristors have a remarkable ability to store multi-bit values in a single cell. In this work, a literature review of the current memory technology (conventional semi-conductor memories) and the non-emerging nonvolatile memories is discussed. Also, different memristor-based applications are reviewed showing that the memory application is the most promising one. Besides, to support the memristor technology specifically or generally RRAM technology, a new Read/Write circuit for multi-bit memristor memories is discussed and compared with the other proposed Read/Write circuits in the literature. The proposed circuit exhibits lower power consumption, less delay when compared to recently published Read/Write circuits. Moreover a comparative study on the capability of different memristor models for transient multilevel memristive memory simulation is discussed and proposed a window function that can improve the accuracy of models based on filament growth theory. key words: memristor, multi-bit memory, read ciruit, time based ADC. |