Search In this Thesis
   Search In this Thesis  
العنوان
Design of Multi-bit Memristor Based Nano Memories /
المؤلف
Hendy,HagarHossamEl-din AbdAlazizAhmed.
هيئة الاعداد
باحث / HagarHossamEl-din AbdAlazizAhmed Hendy
مشرف / Mohamed Amin Dessouki
مشرف / Hassan Mostafa
تاريخ النشر
2018
عدد الصفحات
128p.:
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
الهندسة الكهربائية والالكترونية
تاريخ الإجازة
1/1/2018
مكان الإجازة
جامعة عين شمس - كلية الهندسة - هندسة الإلكترونيات و الاتصالات الكهربية
الفهرس
Only 14 pages are availabe for public view

from 128

from 128

Abstract

Emerging non-volatile universal memory technology is vital for providing the huge
storage capabilities required by the new era. The recently found memristor ”the
missing fourth circuit element”, is a potential candidate for the next-generation
memories and has received great attention in the last few years because of their
unique properties especially in memory technologies. Owing to their analog
nature, memristors have a remarkable ability to store multi-bit values in a single
cell. In this work, a literature review of the current memory technology
(conventional semi-conductor memories) and the non-emerging nonvolatile
memories is discussed. Also, different memristor-based applications are
reviewed showing that the memory application is the most promising one.
Besides, to support the memristor technology specifically or generally RRAM
technology, a new Read/Write circuit for multi-bit memristor memories is
discussed and compared with the other proposed Read/Write circuits in the
literature. The proposed circuit exhibits lower power consumption, less delay
when compared to recently published Read/Write circuits. Moreover a
comparative study on the capability of different memristor models for transient
multilevel memristive memory simulation is discussed and proposed a window
function that can improve the accuracy of models based on filament growth
theory.
key words: memristor, multi-bit memory, read ciruit, time based ADC.