الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
the opeiation of optoelectronie semiconductor devices is to couple electrical, optical, and thermal elThcts that are diflicult to analyze. Simulation tools help de\ ice desirners to deter mine hO\’ these various effects interact and hat is the efleci of the physical parameters on the (le\ ice performance Physical models also describe the device operation ith hiih degree oi accuracy This thesis is devoted to optimize the quantum v elf pat ameters associated v. ith the use of the quantum v elf iii opt ocleeri orric devices such as solar cell, photodetector and infrared
photodetector using the device structure so called single quantum well ( SQ\V) or multi quantum v. elI ( \IQW ) sirucurre l’his optimization process is pet formed u sine the device simulation tool Si mwindow s
The thesis also designs a self—consistent model to simulate the quantum well optoelectronic devices This model is based on the solution of semiconductor transport equations in the bulk r ecions and solution of Schrodinger equation in the cluantum well regions. The model includes capture, escape, and recombination of photoexcued carriers in the quantum wells. This thesis v. ill present results for two simulation tools Sirnwindows to optimize the quantum well parameters to achieve a maximum photovoltaic conversion eflkiency from. the single quantum well solar cell (SQWSC) or multi quantum well solar cell ( MQWS(’) as well as a self—consistent model to simelate the spectral response and the device characteristics of the multi quantum well photodetector Simulation results will analyze how the quantum vell parameters affect the pholovoltaic conversion efficiency In addition, results will prove how the ph\ sical model is more accurate than expected from the simulation tools and able to simulate the spectral response and i—V characteristics of a photodetector w tilt highly degree of accurac.