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المستخلص
Studying the effects of radiations damage on the mechanical, thermal, and electronic properties of materials is a relatively old issue. The interest in that field began even before the first nuclear reactor was constructed.
With the rapid development in the technology of the modern microelectronic circuits, it was necessary to study the effects of radiations on the materials that are used in the manufacturing of the components of the electronic circuits such as integrated circuits, transistors and diodes.
Silicon, n- or p-type, is a basic element in most of the modern microelectronic devices. Studying the effects of the different types of radiation on the electronic properties of doped silicon became’ a basic demand in most of the research programs related to the technology of microelectronics.
In general, the radiations affect the electronic properties of doped silicon via two mechanisms, atomic displacement effects and ionization effects. The electronic properties that are of interest; when studying the effect of radiations on doped silicon, are the resistivity and the minority carrier lifetime.
In this study, phosphorus-doped silicon, produced by the ETRR2 silicon facility, was subjected to low doses of C060 gamma rays and the changes in the resistivity and the minority carrier lifetime were recorded and characterized.
The results showed that there are noticeable changes in the electronic propel1ies of phosphorusdoped silicon due to the irradiation process.
The effects of radiations, even at low doses, on the electronic properties of phosphorus-doped silicon should be considered before qualifying it to be used in radiation environments.