الفهرس 
PHYSICS AND PROPERTIES OF MOSFETOnly 14 pages are availabe for public view
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Abstract
It is the purpose of this thesis to give a detailed consideration to
the behaviour of the trapezoidal gate MOSFET (TGMOSFET) and
the problems associated with its modeling and simulation such as the mobility
degradation, the carrier multiplication and the threshold voltage
shift. On the other hand, it will be shown that TGMOSFET gives
us a novel techni que for proouc ing hot carri er gate current at· small er
channel current and biasing voltages which is very desired in the EEPROM
and automatic offset compensation applications. Also the trapezoidal
gate-form generates transversal surface field which prevents channel lateral
diffusion which is required in the dynamic memory application. Oetal
led analysis of free carrier density distribution. threshold voltage
shift, gate current and channel depth for different channel steepness ana
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different biasing conditions, are carried out.
A complete simulation
model has been developed, which acts as a powerful analysis tool.
In this thesis, we first consider the basic characteristics of the
MO SF ET devi ces and the physi ca 1 phenomena associ ated wi th thew. Thi s
gives us a good foundation for the prediction of the different phenomena which are associated with the trapezoidal formed gate MOSFET. This
study is included in chapter 1.
In chapter 2, we present a detailed
study of the characteri zati on, the concepti on. model ing of TQVOSF ET
and problems associated with it.
In chapter 3 we present the fl~arts of computer programs, the technique of computation and the simulation results.
We
also compare these results with our experimental results. We
finally present our major conclusions about the present study WhiCh we have
performed by using test samples (fabricated by French Thomson Semiconductor
Society) and propose points for further research.