الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
The electrical properties of the system Sego Ge10-x lnx (x = 2,4,6)
have been measured in three stages, glassy state, crystalline state and
supercooled liquid state. The experimental results introduced the
following:
1- Increasing of conductivity, dielectric constant, and dielectric loss
tangent with temperature for all of compositions in the glassy state.
As the frequency increases, both of dielectric constant and dielectric
loss tangent decrease, while the A.C conductivity increases.
2- As the sample transformed into the crystalline state it has been found
that the conductivity, dielectric constant and dielectric loss tangent
depend on the crystallization tamperature. Moreover the values of these
parameters in the crystalline state were higher than that in the glassy
state.
The temperature and frequency dependence of the mentioned
parameters indicated a similar behaviour.
3- For the first time, it has been used both of the dielectric constant and
the dielectric loss tangent to study the phase transformation for the
different compositions of the system Seg0 Ge10_x Inx (x = 2,4,6) by
using of the step wise method at the crystallization temperature 120,
• 130, 140 and 150 C.
It has been pointed out, by applying of Avrami equation and other
equations, that:
a- The order of reaction (n) decreases as the crystallization temperature
increases for all of the samples.
b- The activation energy of crystallization increases as the indium content
increases in the samples.
C- The radius of the crystalline domain increases as the annealing time
mcreases.
d- The diffusion coefficient increases as the crystallization temperature
mcreases.