الفهرس 
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Abstract
The great advances in VLSI technology in recent years have been supported
by the rapid development in the design, fabrication and modeling of
MOSFET devices at the submicron level. Reduction in the transistor size continually
complicates the device physics and makes the device modeling more
challenging and sophisticated. BSIM4 model is one of the most widely used
MOSFET models in circuit simulators since it physically describes the behavior
of the device. Even with a perfect model, still, extracting the values of the
model parameters is another challenging task since assigning a wrong value to
any of the parameter set may cause errors in the simulation.
In this work, a parameter extraction tool is developed using MATLAB
6.5 GUIDE. This tool helps in the automation of the extraction process with the
ability to implement any extraction flow. The DC characteristics of a set of devices
with different dimensions are measured in the lab. An extraction algorithm
for BSIM4 parameters is presented and used with the measured data within the
tool to obtain a DC model card for the 0.i3 JlIl1 technology. A Quality Assurance
(QA) procedure is implemented apart from the extraction tool to ensure the
validity of the extracted model card.
The advanced performance of MOSFETs, their higher level of integration
and their relatively low cost has made them a good candidate for radio
frequency (RF) applications. Thus, MOSFET modeling- at these high frequencies
is becoming a rising issue. Several equivalent circuits (EC) for MOSFETs
at RF are investigated together with the extraction methods used to determine
the values of the components constituting these EC. The S-parameters of a
number of wide devices are measured in the lab and then this data is passed to
the implemented RF extraction tool to find the values of the EC components using
the proposed extraction methodolog