الفهرس | Only 14 pages are availabe for public view |
Abstract Photolithography is used in integrated circuit manufacturing. Feature reduction challenge requires resolution enhancement techniques with the limitations imposed on the wavelength used. Optical proximity correction is one of the resolution enhancement techniques. Optical proximity correction requires predictive process models. In this study, a new methodology is introduced for the sample plan creation based on full chip image parameter coverage analysis. The generated sample plan aims to provide more predictive photoresist models for the lithography process |