الفهرس 
TERAHERTZ RADIATION BANDOnly 14 pages are availabe for public view
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Abstract
Despite the advantages of using terahertz radiation detection technology in the semiconductor field-effect transistors, it still has not shown a strong enough response compared to other competing technologies.
It is therefore important to improve our understanding of the FET operation as a THz detector. Metal-semiconductor field-effect transistors (MOSFETs) are emerging as promising candidates for THz detection due to their high level of integration with other electronic circuits and relatively fast response time for operation at room temperature with low noise.
All these features have made the metal-semiconductor field-effect transistor one of the most effective THz detectors. In this work, we present a review of the effect of physical models used in the literature to model the operation of FET of THz detectors. Due to the significance of MOSFET applications in many fields, a simulated model of the terahertz detector was made MOSFET to develop a model of terahertz detectors using this type of transistors.
In addition, Silicon MOSFET with several channel lengths is simulated by Synopsis Sentaurus device simulator and then investigated to operate as THz detectors in the photovoltaic and photoconductive modes. The results of our model were discussed and compared with the experimental data of other known FET detector models. Also, they interpreted using a proposed theory to provide an optimum design of the THz detector with high response