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Abstract The Low Noise Amplifier (LNA) is the first block in the receiver chain and is used to amplify the weak Radio Frequency (RF) signal arriving from external antenna, duplexer switch, and band select filter. To minimize the various noise contributions of the amplifier circuits, the noise source needs to be carefully analyzed and subsequently optimized. As wireless products such as cellular phones, Global System for Mobile communications (GSM), Global Positioning Satellite (GPS), Wireless Local Area Network (WLAN) ...etc become an everyday part of people’s lives. The need for high performance at low cost and low power consumption becomes even more important in addition to the size of the wireless device. The objective of the thesis is to enhance the performance of Salama and soliman Low Voltage Low Power (LVLP) CMOS RF LNA circuit using 90 nm Complementary Metal Oxide Semiconductor (CMOS) technology. And studying the wideband balun-LNA with different topologies for different application then propose a new design to boost the gain with a moderate Noise Figure (NF) to cover a wideband frequency range from 3 GHz to 10 GHz |