الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
Fifth generation (5G) is the next mobile communication standard that will support higher data rates, higher spectrum efficiency, reliability, and lower latencies. Currently, demanding frequency bands for mm-wave 5G are at 24.25-27.5 GHz, 28 GHz, and 39 GHz. Building wideband beamformers/transceivers to cover the entire mm-wave 5Gfrequency bands from 24 GHz to 47 GHz is appealing for the next generation systems. Such wideband systems require the design and development of wideband or tunable components to achieve the desired performance. Those components include switches, low noise amplifiers, power amplifiers ...etc.
The thesis presented a tunable resonant multiband T/R switch designed and fabricated in 45nm SOI CMOS to cover the frequency band from 24 GHz to 47 GHz allocated for 5G. The proposed tunable switch relied on changing the number of stacked devices that are on. The proposed switch was implemented and fabricated using 45 nm SOI technology and it consumed an area of 0.05 mm2. Measurement results showed low insertion loss of minimum value of 0.8 dB with high linearity achieved in the TX path.
Also, the thesis presented a linearized low-noise amplifier (LNA) is proposed and fabricated in 45nm SOI CMOS. The LNA covers the frequency band from 32 GHz to 49 GHz. A linearization circuit is proposed to boost the Linearity IIP3. The LNA occupies an area of 0.25 mm2. The LNA achieves a gain of 18.7 dB, noise figure in the range of 2.8-3.8 dB, a peak value of IIP3 at 3.5 dBm at 38.5 GHz. The LNA consumes 15 mW from a 1.25 V supply.