الفهرس 
AC conductivity of organic semiconductorsOnly 14 pages are availabe for public view
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Abstract
Silicon phthalocyanine dichloride (SiPcCl2) thin films were prepared using thermal evaporation technique. The SiPcCl2 powder was polycrystalline and transformed to amorphous form for pristine, annealed, UV and γ- irradiated thin films. FTIR spectra reveal that the depositing annealed, UV and γ- irradiated have not any impact on the molecule the chemical bonds. Using a SEM, the morphology of the films surface has no change in the formation of the deposited film after annealing, UV and γ- irradiation. AFM images of the SiPcCl2 thin film reveal the granular nature of the SiPcCl2 surface with average roughness and a root-mean-square roughness about 4.10 and 5.26 respectively. Morever, the optical properties of the annealed and gamma irradiated thin films were studied under normal incidence of light and at room temperature in the wavelength range from 190 – 2500 nm. The electronic transition type is an indirect allowed transition were found. As the annealing temperature increased from 363 K to 493 K, the defects gradually disappeared and the localized density of states tended to decrease; thus, the optical energy gap increased. Also, the optical band gap decreased from 2.44 eV to 2.09 eV after irradiation with 5 KGy. The annealing and γ- irradiation effect on optical parameters, such as the real (ε1) and imaginary (ε2) parts of the dielectric constant, the volume energy loss function (VELF) and the surface energy loss function (SELF). The ratio between the free charge carrier concentration and the effective mass (N/m*), the lattice dielectric constant (εL), the infinite frequency dielectric constant (ε∞), the oscillator energy (Eo) and the dispersion energy (Ed) were calculated under thermal annealing and γ- irradiation coinditions. Furthermore, the optical properties of UV- irradiated thin films were studied under normal incidence light at room temperature in the wavelength range from 190 – 900 nm