الفهرس 
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Abstract
Abstract
In this thesis, a design technique to improve low noise amplifier (LNA)
performance is proposed. This technique is based on new operating parameters
(OPs) of MOSFETs for radio frequency (RF) applications. This technique is
used to optimize low noise Amplifier (LNA) parameters for Ultra-Wideband
(UW8) applications. The presented methodology predicts the optimum
biasing point to maximize LNA performance. Simulation results show that the
proposed methodology can increase the figure of merit (FoM) by 70 %
compared to traditional methodologies, without having a significant effect on
either noise figure (NF) or linearity characteristics.