الفهرس 
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Abstract
Bulk alloys of CuIn1-xGaxSe2 (CIGS) with Ga- incorporation ratio
x= Ga/ (Ga+In) equal to 0.1, 0.2, 0.3, 0.4 and 0.6 have been prepared by
the melt quench technique followed by sintering process. The CIGS thin
films have been deposited on clean microscope glass substrates with
different thicknesses (t) in the range of 100- 1000 nm using the thermally
evaporated technique in a vacuum of 3x10-4 mbar from their origin bulk
alloys.
X- ray diffraction (XRD), scanning electron microscope (SEM) as
well as energy dispersive analysis of X- ray (EDAX) investigations before
and after annealing have been used to inspect the CIGS internal
microstructure, surface morphology and stoichometries of CIGS
component elements respectively.
Lnσ vs.
plots in 300 ≤ Tamb (K) ≤ 560 range were employed
to ascertain the material behavior whether it is metallic or semiconducting
one, and to determine its thermal activation energy. Values of Seebeck
coefficient (SRT) and electrical conductivity (σRT) measured at room
temperature (RT = 300 K) were utilized to determine and, then, examine
the variations of the parameters, namely, Fermi energy (Ef), carrier
concentration (N), mobility (µ), diffusion coefficient (D) as well as mean
free path (ℓ) with Ga- ratio (x), thickness (t) and annealing temperature