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العنوان
Performance of Organic Semiconductor Light Emitting Diode /
المؤلف
Ramadan, Dina Hewidy Mahmoud.
هيئة الاعداد
باحث / دينا هويدى محمد رمضان
مشرف / جمال عبد الفتاح
مشرف / عبد الستار محمد عبد الستار
مشرف / ----
الموضوع
Light emitting diodes. Semiconductors.
تاريخ النشر
2016.
عدد الصفحات
viii, 213 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
فيزياء المادة المكثفة
تاريخ الإجازة
1/1/2016
مكان الإجازة
جامعة القاهرة - المعهد القومى لعلوم الليزر - قسم علوم الليزر
الفهرس
Only 14 pages are availabe for public view

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Abstract

Recently, organic light emitting diodes (OLEDs) have been attracting considerable attention due to their applicability to future display systems, i.e., thin, flexible and low-cost flat panel displays. Further, organic laser diodes (organic LDs), which can be classified as post-OLED applications, have emerged as a challenging research subject in organic optoelectronic devices. In this thesis, organic polymer light emitting diodes (OLEDs) were fabricated based on poly[2-methoxy-5-(2’-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) as emissive polymer layer. The fabricated OLEDs have the configuration: ITO/PEDOT:PSS/MEH-PPV/PEDOT:PSS/Al with different MEH-PPV layer thickness. Also, hybrid light emitting diodes (HyLEDs) with the configuration: ITO/PEDOT:PSS/ MEH-PPV/ZnO seed/ZnO NRs/Al and transparent organic light emitting diode (TOLED) with ITO/PEDOT:PSS/MEH-PPV/PEDOT:PSS structure were fabricated. The organic MEH-PPV and PEDOT:PSS layers were deposited using spin coating technique, while the inorganic ZnO NRs layer was deposited using chemical bath deposition (CBD). The absorbance and photoluminescence spectra were measured for MEH-PPV thin films and ZnO NRs layer. Furthermore, the optical bandgap was determined for both MEH-PPV and ZnO NRs. The surface morphology was studied for the MEH-PPV emissive layer using atomic force microscope (AFM). The structural properties of ZnO NRs layer were studied by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The I-V characteristics and the electroluminescence were measured for the fabricated OLEDs. The OLED devices performance was enhanced by post-depostion thermal annealing at 150 ºC. The I-V characteristics and the electroluminescence were measured for the fabricated HyLEDs.