الفهرس 
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Abstract
Pb0.9Sn0.1Se bulk has been prepared from its constituent elements under vacuum in sealed silica ampoule. Thin films of Pb0.9Sn0.1Se were deposited using thermal vacuum evaporation and pulsed laser deposition techniques. XRD measurements confirm the cubic crystalline structure for both bulk and thin films. SEM micrographs show the films consist of fine grains and compact in the nano scale and the films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference fringes for thicker film. Free carriers absorption was noticed in the thermal evaporation film which was removed by annealing at 773 K for 1 h under vacuum as a result of removing the defects. Calculation of optical band gap from optical absorption coefficient shows that the optical band gap of the thermally evaporated film was a quite increased while high increase in band gap was observed in the pulsed laser deposited film. Optical band gap was reduced by annealing the thermal vacuum evaporated films due to Burstein-Moss shift while the strong shift in the pulsed laser deposited film was explained through the energy gap confinment effect of the nanostructured materials. In photoconductivity measurments, the photosensitivity of the pulsed laser deposited film is higher than those of the thermally deposited one by 5 order of magnitude while thermally deposited film possess shorter carriers lifetime.