الفهرس 
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Abstract
Among Π-VІ semiconductor binary system microstructure,
Cadmium Telluride is of technological importance in optoelectronic
devices, detectors and solar cells application. On the other hand,
devices based on nanomaterial have a great potential application in
all of fields in human life. Nano-structure CdTe coming to replace
microstructure CdTe due to its great benefits in solar cell application,
optoelectronic devices, bio-imaging and PH sensitive detectors.
Nanostructure CdTe in form of quantum dots (QDs) have
been synthesized using hot injection chemical technique. Three
samples with different particle size have been synthesized. CdTe QDs
thin films have been deposited by thermal evaporation technique. The
CdTe QDs powder and the as deposited films were characterized
using X-ray diffraction and high-resolution transmission electron
microscopy (HRTEM).The X-ray analysis shows that both CdTe QDs
powder and the as deposited films crystallize in cubic zinc-blende
type structure.
The optical properties of the as deposited films have been
characterized by using double beam UV-Vis-NIR spectrophotometer
Abstract
XIII
at normal incidence. The optical band gaps have been found to
tunable with the variation of particle size, which attributed to
quantum confinement effect. The optical constants (refractive index
and absorption coefficient) also have been calculated. The refractive
index in non-absorbing region was found to decrease than its value in
microstructure CdTe. The dispersion parameters also have been
calculated by using classical models and some empirical relations.
The photovoltaic properties and current conduction
mechanisms of dark (I-V) characteristics of Au/CdTe QDs/p-Si/Al
heterojunction diode were studied.
In this thesis, all the obtained-calculated- data were compared
with the data from literature for microstructure CdTe. The results
confirm the importance of CdTe QDs in solar, detectors and sensors
applications.