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Abstract The copper electrode potentials measured by the open circuit potential method in strongly aerated solution of SO4-2, Cl-, Br-, I-, CrO4 -2, CO3 -2, and NO2 -, with difference concentrations, till steady state values are attained. The copper electrode potentials of all the experiments increase from negative to more positive values indicating oxide film growth. The copper oxide film thickness maximum value at low and high concentrations of each aggressive and inhibitive anions respectively. The rate of oxide film thickening is determined by use the relation: E = a + b log t, where a and b are constants. The concentration of the inhibitive anions, CrO4 -2, CO3 -2, and NO2 - that can withstand a certain concentration if the aggressive ions SO4-2, Cl-, Br-, and I-, varies due to the relation: log Cinh. = A + n log Cagg. where A and n are constants. The corrosion behavior of copper in 2M HNO3 solution in the absence and presence of some organic inhibitors such as phenylhydrazine, Urea, Thiourea, N-allylthiourea, thiosemicarbazide is investigated using gasometry, weight loss, and galvanostatic polarization technique (Tafel measurements). Another inorganic inhibitors such as Na2WO4, Na2HPO4, and Na2CrO4 used to study the behavior of copper corrosion in 2MHNO3 by using gasometry measurements. The effect of temperature on the copper corrosion inhibition has been studied by gasometry technique only. The inhibitive action of these compounds is discussed in terms of blocking the electrode surface by adsorption of the inhibitor molecules according to Langmuir isotherm. The thermodynamic parameters; Ea, K ads., ΔH, ΔS, and ΔGo ads. of the organic inhibitors for Cu in 2MHNO3 solution were calculated by gasometry measurement. The thermodynamic parameter ΔGo ads. reveals strong physisorption of the inhibitors on the copper surface. The corrosion parameters of copper [ Ecorr. (V), Icorr.(A /cm2) , α (V)] in presences of different concentrations of HNO3 and in 2MHNO3 contains different organic inhibitors with different concentrations are. |