الفهرس 
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Abstract
Cadmium Sulfide (CdS) thin films are grown epitaxialy on p-type Si wafers with orientations (100) and (111) using a complete home-made open chemical vapor deposition (CVD) system. The CVD system is consisted of two main parts, hydrogen gas system and tubular reactor with three hot zones. The temperatures of the first, second and third zones are 700 C, 900 C and 500 C respectively.
The CdS is evaporated in first zone and reacts with H2 gas. Both Cd and S atoms are deposited on Si wafers forming a thin crystalline layer of CdS at the third zone. The partial pressures of the gaseous species, diffusion coefficient of Cd atoms in H2 gas, stagnant layer thickness, and collision diameter of Cd atoms in H2, total number of molecules per cm3 and CdS deposition rate are calculated. The CdS films are deposited onto Si wafer under different calculated fabrication parameters. The deposited CdS films are characterized using scanning electron microscope (SEM) and X-ray diffraction (XRD). The current-voltage and capacitance-voltage characteristics curves under dark and illumination conditions are investigated.