Search In this Thesis
   Search In this Thesis  
العنوان
Physical and Electrical Characterization of Thin Film Solar Cells \
المؤلف
Mahmoud, Mohamed Salah El-Sayed.
هيئة الاعداد
باحث / محمد صلاح السيد محمود
engmohsalah234@yahoo.com
مشرف / محمود محمد شبانة
مشرف / معتزبالله محمد سليمان
مشرف / كمال محمود على حسن
مناقش / أحمد خيرى أبو السعود
الموضوع
Solar Energy.
تاريخ النشر
2013.
عدد الصفحات
78 p. :
اللغة
الإنجليزية
الدرجة
الدكتوراه
التخصص
الهندسة (متفرقات)
تاريخ الإجازة
1/4/2013
مكان الإجازة
جامعة الاسكندريه - كلية الهندسة - قسم الرياضيات والفيزياء الهندسية
الفهرس
Only 14 pages are availabe for public view

from 101

from 101

Abstract

Flourine doped tin oxide on glass substrates was prepared by nublizer and CulnS2 thin films were electrodeposited onto fiourine doped tin oxide substrate by the electrodeposition technique. Cyclic voltametry and chronoamperometry were carried out to determine the optimum pH and the amount of sodium thiosulfate for electroplating CuInS2 compound. The composition, crystallinity and optical properties of the compounds synthesized were studied by energy dispersive X-ray (EDX), Scanning Electron Macroscope (SEM), X-ray diffraction and DV-Visible spectra. It was found that the increasing pH shifts the electrodepositions voltage toward more negative and lowers the deposition cun•ent. Increasing the amount of sodium thiosulfate also decreases the deposition CUITent but it has no effect on the deposition potential. It was concluded that CulnS2 thin films with atomic stoichiometric ratio were obtained at pH equals 1.5 and 150 ml of 0.1 M sodium thiosulfate, 5 ml of 0.1 M indium chloride and 5 ml of 0.1 M cupper chloride. The optical energy gaps were calculated to be 1.95, 2.2, and 2.26 eV for CuInS2 prepared at 1.5,2.5 and 4.5 of pH, respectively. It was indicated that the amount of sodium thiosulfate has a slight effect on the energy gap. Heat treatment of CdS leads to formation of stochiometric films. Two hetrojunction solar cell structures have been fabricated. First structure of FTO/ CuInS2/ ZnO/ FTO hetrojunction solar cell was fabricated. Under illumination condition, it was found that Is.c, Vo.c, and 11 values are 1.02xlO-4 A/cm2, 0.52V, and l.4xlO-2%, respectively. The second structure of FTO/CuInS2/CdS/ZnO/AI¬ZnO/Al contact hetrojunction solar cell was fabricated. Under illumination condition, it was found that, Is.c, Voc, 11 values are, 2.9 xl 0-4 Ncm2, O.77V and 0.11 % respectively.