الفهرس 
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Abstract
The main purpose of this work is to establish a local MOS technology.
This thesis consists of four chapters:
@ The first chapter is review of MOScapcitor theory. It includes the capacitance-voltage characteristics of the ideal MOS capacitors and parameters that affect these charactristic in real MOS capacitors.
The second chapter briefly the methods of measuring the device parameters, e. g. interface states, fixed oxide charge, doping and monitoring carrier liftime.
@ Experimental work on technology and measurement techniques are presented in the third chapter. A typical set of results for each method is given , and the limitations of each measurement setup are discussed.
@ The dependence of device parameters on some technological processes is discussed in the fourth chapter. Physical explanation of sucg dependence and the limitations of our established technology are given.