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العنوان
Low Power Threshold Logic Gate Based on Nanotechnology Double Gate Mosfet /
المؤلف
Mohammed, Aliaa Salah Ahmed.
هيئة الاعداد
باحث / علياء صلاح احمد محمد
مشرف / هشام فتحى على حامد
مشرف / السيد عبد الحميد محمود
مناقش / السيد مصطفى سعد
مناقش / رشدي أبو العزايم عبد الرسول
الموضوع
Metal oxide semiconductor field-effect transistors. Silicon-on-insulator technology. Electrical Engineering.
تاريخ النشر
2011.
عدد الصفحات
89 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
الهندسة الكهربائية والالكترونية
تاريخ الإجازة
1/1/2011
مكان الإجازة
جامعة المنيا - كلية الهندسه - الهندسـة الكهربيـة
الفهرس
Only 14 pages are availabe for public view

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Abstract

In this thesis, novel current mode threshold logic gate circuits based on 32 nm DGMOSFET transistor are proposed. The two gates of DGMOSFET provided reduction in the number of transistors (almost to half) that are required to build TLG circuit.( So, reduction in the total area and the power dissipation). Many logic functions have realized and simulated such as OR, AND, majority, NOR, NAND, and minority, using proposed DGCMTL. HSPICE simulation results show good overall performances with single supply voltage 1 V.
In this thesis, digital circuits based on 32 nm DGMOSFET transistor are proposed. The two gates of DGMOSFET provided reduction in the number of transistors that are required to build digital. (So, reduction in the number of transistors and the power dissipation). We have realized and simulated many digital circuits such as half adder, XOR, half subtractor, and RS-Flip-Flop. HSPICE simulation results show good overall performances with single supply voltage 1 V.
6.2 Recommendations for Future work
As for possible future work on this field we suggest:
• Design of variable weights CMTLG based on DGMOSFET to make more complicated functions.
• Implement more complicated digital circuits based on DGMOSFET such as encoder, decoder, and mixer.