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العنوان
Kinetic, Of Crystallization Of Kinetic, Of Crystallization Of Amorphous Semiconductors /
المؤلف
EL-Rahmany, Ahmed Abd Alla Mohamed.
هيئة الاعداد
باحث / el rahmany, ahmed abd alla mohamed.
مشرف / m.m.elzaidia
مناقش / A, A. AMMAR
مناقش / m.m.elzaidia
الموضوع
Semiconductors. Narrow gap semiconductors. Physics.
تاريخ النشر
1985.
عدد الصفحات
162 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
علوم المواد
تاريخ الإجازة
1/1/1985
مكان الإجازة
جامعة المنوفية - كلية الإقتصاد المنزلى - الفيزياء
الفهرس
Only 14 pages are availabe for public view

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Abstract

The aim of this research will be proceeds in two parallel paths. This is to get the best mean to specify the best properties of the material under test. These two paths are : Firstly : study of the electric current as a function of the phases. The I-V characteristics of the amorphous sample AS34.2Ge7TeS8.8 was traced at various ambient temperatures. It was found that, the threshold voltage decreases as the ambient temperature increases and the deduced activation energy of conduction was 0.40 eVe The derived average power dissipated in the sample at threshold is 0.018 watt.