الفهرس | Only 14 pages are availabe for public view |
Abstract rapid device scaling pushes the dimension of the field effect transistors to the nanometer regime where quantum effects play an important role in determining the transistor characterisitics the non-equilibrium green`s function formalism (NEGF) provides a rigorous description of quantum transport in nanoscale devices the realspace (RS) representation is the most accurate yet complex representation used in the NEGF. |