الفهرس 
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Abstract
Nickel oxide thin films have been prepared by sol-gel process. The dip coating technique was incorporated with sol-gel process to obtain the good quality NiO films with good electrochromic performance Nickel acetate tetrahydrate [Ni (CH3COO) 2.4H20] has been used as the starting material with absolute ethyl alcohol to prepare NiO thin films on both glass and indium tin oxide glass (ITO) substrates with heat treatment at different annealing temperatures from 673-733 K.
Thermogravimetric and Differential thermal analysis (TGA, and DTA) was studied for the xerogel sample. The results showed the formation of the polycrystalline NiO achieved at 660 K. Infrared spectral absorbance has been investigated for the prepared NiO powders. The results showed the existence of the Ni - O bond in all samples. Impurities of sulfate groups were found at annealed temperature less than 693 K.
Polycrystalline structures of the prepared films were characterized by X-Ray diffraction analysis, and the particle size was determined by Scherrer formula. Moreover, the dislocation density (8), the strain (s) and the lattice parameters have been estimated.
The microstructure of the prepared thin films was investigated by the transmission electron microscope (TEM). The d-spacing of NiO films were determined using electron diffraction technique with GATAN program.
The optical properties of NiO thin films have been examined. The optical constants such as the absorption coefficient {a), extinction coefficient (t), the energy gap (Ee) and the refractive index (H) of the
films were determined by the transmission and reflection 3E2surements in the wavelength from 250 nm to 2500 nm. The results anewed the existence of two direct and indirect transitions through the SDcposition. The refractive index values and the high frequency ite-lectric constant were investigated.
\ Temperature dependence of the electrical conductivity of nickel (Essie thin films were measured at temperature range 303-423 K. the aesalts showed Arrhenius type behavior. The activation energy and the cs3oducti«Q type were studied and calculated.
The electrochromic behavior of the prepared films was studied. The effect of annealing temperature on the electrochromic behavior was efesaved and detected. Good electrochromic performance was observed *T<713K.