الفهرس 
Chapter 1 : IntroductionOnly 14 pages are availabe for public view
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Abstract
The metal oxide semiconductor field effect transistor (Mosfet) has become the most impor tomt and fundamental building part of very- large- scale – integrated (VLSI) circuits due to its universal properties. The demand for higher packing density, low powur consumption, high – speed and low cost requires aggressive scaling of the Mosfet. The continuous scaling – down of mosfet geometry requires investigating the effect of scaling down on the mosfet performance. Cut-off fre quency, tran sconduc ance, threshold voltage, CMOS tnverter delay and power dissipation are computed. The cut – off frequency is invesingated at small channed length taking into con sideration the gate drain and sowce overlap and the fringing capacitances, Alsa, the effect of the mobility and the threshold . voltage shift (Avth) is considered. The results show the variation and threshold voltage with the channed length. On the device dimensions is illustrated also, the challenges of the scaling – down of the mosfet suchas the direct tunneting current, and the noise are computed.