الفهرس 
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Abstract
A polycrystalline silicon solar cells are fabrica
ted using P-type silicon wafers with medium grain sizes.
For comparison, single crystal silicon solar cells are
also fabricated using the same fabricating parameters.
The optical and electrical properties of the fabricated
solar cells are discussed in detail. We have calculated
a high value for the ideality factor in both poly and
single crystal solar cells. This anomaly is attributeol.
tc the rectifying metal-semiconductor(MS) contact prod
uced. The rectifying MS contact is put into cc•nsidera
tion in a simplified model describing the equivalent
circuit of our real solar cells. Furthermore, based on
the above mentioned model, a new approach to the real
solar cell modeling is presented. For the first time, a
quantitative agreement has been found between measured
and calculated results. This model was confirmed by
the electrical behaviour of a circuit analogue. Finally
fabrication methods were proposed to overcome the con
tact troubles associated with low doping concentration
at the metal-semiconductor interface. A theoritical
review for the conduction mechanisms in polycrystalline
silicon solar cells and metal-semiconductor Schottky
barriers are also presented.