الفهرس 
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Abstract
This study was conducted to detect the presence of (1/f) noise, and determine the relationship between such noise and the shunt resistance in commercially manufactured wide shallow - silicon p-n junctions. Four commercially manufactured solar calls of areas (5x5) cm’ with shunt resistances of 75,19,30 and 40 ohms were investigated in
darkness in the frequency range frown hertz up to 10 kilo
hertz, using a Marconi TF-2330A, wave analyser under
different forward biasing voltages.
It was hypothized that the (1/f) noise measurements would be used as a non-destructive testing procedure, to indicate --the call manufacturing quality and performance,in view of the (1/f) noise characteristics and its relation to the cell parasitic shunt resistance.
Results, herein, obtained revealed
:
1- The presence of (1/f2) noise indicating that the cells under investigation are inhomogeneous, dominated by traps and impurity centers.
2- The correlation between the (1/f) noise measurements and the parasitic shunt resistance.
3- The corner frequency (fa) could be used as an indica¬tion to the call quality.
4- (1/f) Noise measurements can be used as a non-destructive method, to evaluate reliability, and technologies used in. manufdcturing.solar cells.