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Abstract When sunlight strikes a solar cell. the incident energy is converted br>directly into electricity without any mechanical movement. Solar cells have been used for over t.wo decades. intially for providing electrical power for spacecraft and more recently for terrestrail systems.The basis for photovoltaic action in a semiconductor device is an electronic asymmetry in the device structure. There are. of course. a large number of ways of creating 3 asymmetry apart from using silicon p-n junction solar cell. The metal- insulator - semiconductor (MIS) structure is currently receiving much attention in solar cell studies. The fabrication of MIS diodes is relatively cheap ~,_~ simple, when compared to p-n diodes. and t.hus ~he possibility of obtaining p-n like performance from such a strucutre is very attractive. It IS shown that the open - circuit voltage increases than the case of p-n junction solar cell, consequently the efficiency of the cell is improved. brThis thesis deals with the effect of metal film t~l:ckness on the metal-insulator-semiconductor solar cell br>;;erformance. |