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Abstract
Vanadium thin films prepared by thermal evaporation under
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vacuum of 10 Torr onto glass substrates were held at room tempera-
ture during the deposition process.
The deposition rate was also
kept constant at 3nm per second.
Structural investigation using both electron micr oscope diffusion
and tranornission microscope techniques shows that vanadium thin
fi lrns deposi ted onto glass substrates held at RT have polycrystalline
structure. The grain size increases with increasing the film thickness.
The dark electrical resistivity (P) of vanadium thin films depo-
sited onto glass substrates was determined.
It was found that fJ
decreases exponentially with increasing the film thickness. An attempt
to fit the experimental results to both F-S and M-S theories was
done.
It was found that there is a good agreement between F-S
theory as well as M-S theory with F(a )=0.953 for the obtained results
nflhf’ whole thir knc-ss range (15-240 nrn) utilized in the present
work. The agreement between F-S theory and the experimental results
irlcii(dt(’S tl1;11 the spr-cular i ty parameter P must have II r clnt ivc ly
small value, which is conf ir rned here after.
Throughout the vanadium dark electr ical resistivity investigation
In conjunction with F-S theory, the mean free path t of the free
.